ローム：1200V/第4世代SiC MOSFETを開発：車載パワートレインシステム（動画）：
ROHM: 1200V/4th generation SiC MOSFET developed: Automotive powertrain system：
ROHM：开发1200V / 4th SiC MOSFET：汽车动力总成系统
ローム：
「1200V/第4世代のSiC･MOSFET」を開発。
第4世代のSiC･MOSFET：
「業界トップの低ON抵抗」を実現しています。
単位面積当たりのON抵抗を、同社従来1200V品より約40％低減。
主機インバータの車載パワートレインシステムや産業機器向け電源用の需要に応えます。
6月からベアチップのサンプル出荷の予定。
8月以降、TO2473L（3端子）／4L（4端子）などのディスクリートパッケージでサンプル出荷を開始する。
※1) MOSFET（Metal-Oxide-Semiconductor Field Effect Transistorの略)
金属－酸化物－半導体電界効果トランジスタのこと。
FETの中では最も一般的に使用されている構造である。
スイッチング素子として使われる。
電波新聞デジタル
https://dempa-digital.com/article/58869
New 4th Generation SiC MOSFETs Featuring the Industry’s Lowest ON Resistance
June 17th, 2020
Advanced design expected to see widespread adoption in the main drive inverters of EVs
ROHM
announces the cutting-edge 4th Generation 1200V SiC MOSFETs optimized for automotive powertrain systems, including the main drive inverter, as well as power supplies for industrial equipment.
In recent years, the proliferation of next-generation electric vehicles (xEVs)
has been accelerating the development of smaller, lighter, and more efficient electrical systems.
In particular, improving efficiency while decreasing the size of the main inverter that plays a central role in the drive system remains among the most important challenges, requiring further advancements in power devices.
The capacity of the onboard battery
is increasing to improve the cruising range of EVs. And in conjunction with this, the use of higher voltage batteries (800V) is progressing to meet the demand for shorter charging times.
To solve these various challenges,
designers urgently need SiC power devices capable of providing high withstand voltage with low losses.
As a result, ROHM’s new 4th Generation SiC MOSFETs
are capable of delivering low ON resistance with high-speed switching performance, contributing to greater miniaturization and lower power consumption in a variety of applications, including automotive traction inverters and switching power supplies.
Bare chip samples have been made available from June 2020, with discrete packages to be offered in the future.
ROHM
is committed to continue to expand its SiC power device lineup while combining modularization technologies with peripheral devices such as control ICs designed to maximize performance in order contribute to technical innovation in next-generation vehicles.
At the same time, ROHM will provide solutions that resolve customer issues – including web-based simulation tools that reduce application development man-hours and help prevent evaluation problems.
Key Features
1) Improved trench structure delivers the industry’s lowest ON resistance
2) Achieves lower switching loss by significantly reducing parasitic capacitance
ROHM Semiconductor – ROHM Co., Ltd.
https://www.rohm.com/news-detail?news-title=new-4th-gen-sic-mosfets&defaultGroupId=false