ROHM：开发1200V / 4th SiC MOSFET：汽车动力总成系统
罗姆：
开发了“ 1200V / 4th SiC MOSFET”。
第四代SiC MOSFET：
实现了“业界最高的低导通电阻”。
与该公司的常规1200V产品相比，每单位面积的导通电阻降低了约40％。
我们将满足车载动力总成系统用功率逆变器和主逆变器工业设备的需求。
裸芯片的样品出货将于6月开始。
从8月起，样品将以分立包装的形式装运，例如TO2473L（3个端子）/ 4L（4个端子）。
* 1）MOSFET（金属氧化物半导体场效应晶体管）
一种金属氧化物半导体场效应晶体管。
这是FET中最常用的结构。
用作开关元件。
登巴新闻数码
https://dempa-digital.com/article/58869
New 4th Generation SiC MOSFETs Featuring the Industry’s Lowest ON Resistance
June 17th, 2020
Advanced design expected to see widespread adoption in the main drive inverters of EVs
ROHM
announces the cutting-edge 4th Generation 1200V SiC MOSFETs optimized for automotive powertrain systems, including the main drive inverter, as well as power supplies for industrial equipment.
In recent years, the proliferation of next-generation electric vehicles (xEVs)
has been accelerating the development of smaller, lighter, and more efficient electrical systems.
In particular, improving efficiency while decreasing the size of the main inverter that plays a central role in the drive system remains among the most important challenges, requiring further advancements in power devices.
The capacity of the onboard battery
is increasing to improve the cruising range of EVs. And in conjunction with this, the use of higher voltage batteries (800V) is progressing to meet the demand for shorter charging times.
To solve these various challenges,
designers urgently need SiC power devices capable of providing high withstand voltage with low losses.
As a result, ROHM’s new 4th Generation SiC MOSFETs
are capable of delivering low ON resistance with high-speed switching performance, contributing to greater miniaturization and lower power consumption in a variety of applications, including automotive traction inverters and switching power supplies.
Bare chip samples have been made available from June 2020, with discrete packages to be offered in the future.
ROHM
is committed to continue to expand its SiC power device lineup while combining modularization technologies with peripheral devices such as control ICs designed to maximize performance in order contribute to technical innovation in next-generation vehicles.
At the same time, ROHM will provide solutions that resolve customer issues – including web-based simulation tools that reduce application development man-hours and help prevent evaluation problems.
Key Features
1) Improved trench structure delivers the industry’s lowest ON resistance
2) Achieves lower switching loss by significantly reducing parasitic capacitance
ROHM Semiconductor – ROHM Co., Ltd.
https://www.rohm.com/news-detail?news-title=new-4th-gen-sic-mosfets&defaultGroupId=false