SiC-MOSFET结构的剖面图来源：三菱电机
三菱电机：SiC-MOSFET /电路仿真：开发了新的SPICE模型
三菱电机：
7月9日，我们开发了独特的SPICE（具有集成电路重点的仿真程序）模型。
SiC功率半导体“ SiC-MOSFET”的开关速度的高精度仿真。
什么是“ MOSFET”：
“金属氧化物半导体场效应晶体管”的缩写。
晶体管利用自由电子和半导体中的空穴的运动来执行电放大。
高效的电路设计工作：
几乎等于测量值的模拟是可能的。
配备SiC-MOSFET的电力电子设备的简化电路设计工作。
传统的SPICE模型：
当使用传统的SPICE模型模拟SiC-MOSFET时，存在的问题是“无法以足够的精度分析在高速开关操作期间产生的电流波形”。
使用新的SPICE电路分析工具解决了：
在设计配备分立功率半导体的电子设备时，
电源转换电路的元件操作，
栅极驱动电路中的设备操作
可以通过仿真预先进行预测。
通过使用新的SPICE电路分析工具进行仿真来解决。
单反主义者
https://monoist.atmarkit.co.jp/mn/spv/2007/13/news069.html
Mitsubishi Electric Develops Accurate Circuit Simulation Technology for SiC-MOSFETs
TOKYO, July 9, 2020 –
Mitsubishi Electric Corporation (TOKYO: 6503)
announced today that it has developed a highly accurate Simulation Program with Integrated Circuit Emphasis (SPICE) model to analyze the electronic circuitry of discrete power semiconductors.
The technology
is deployed in the company’s “N-series 1200V” SiC-MOSFET* samples of which will begin shipping in July.
The model simulates high-speed-switching waveforms almost as well as actual measurements, on a level of accuracy
currently believed to be unmatched in the industry, which is expected to lead to more efficient circuit designs for power converters.
Going forward, Mitsubishi Electric
expects to add several temperature-dependent parameters to enable its SPICE model to work at high temperature.
The company presented the new model** on July 8 at the International Conference on Power Conversion and Intelligent Motion (PCIM Europe 2020), which was held online on July 7 and 8.
Key Features
Unique SPICE model enables efficien circuit design for power converters
The new model
enables high-precision simulation of the drain current flowing through the power conversion circuit over the entire rated current range.
Circuit designers
can spend less time complementing data with experiments, raising work efficiency from the early stages of power converter development.