ROHM: 1200V/4th generation SiC MOSFET developed: Automotive powertrain system
ROHM:
Developed “1200V/4th generation SiC MOSFET”.
4th generation SiC MOSFETs:Industry top low ON resistanceis realized.
The ON resistance per unit area is reduced by about 40% from the company’s conventional 1200V product.
We will meet the demand for power inverters for in-vehicle powertrain systems and industrial equipment for main inverters.
Sample shipments of bare chips will begin in June.
From August, samples will be shipped in discrete packages such as TO2473L (3 terminals)/4L (4 terminals).
*1) MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor)
A metal-oxide-semiconductor field effect transistor.
This is the most commonly used structure in FETs.
Used as a switching element.
Denpa Shimbun Digital
https://dempa-digital.com/article/58869
New 4th Generation SiC MOSFETs Featuring the Industry’s Lowest ON Resistance
June 17th, 2020
Advanced design expected to see widespread adoption in the main drive inverters of EVs
ROHM
announces the cutting-edge 4th Generation 1200V SiC MOSFETs optimized for automotive powertrain systems, including the main drive inverter, as well as power supplies for industrial equipment.
In recent years, the proliferation of next-generation electric vehicles (xEVs)
has been accelerating the development of smaller, lighter, and more efficient electrical systems.
In particular, improving efficiency while decreasing the size of the main inverter that plays a central role in the drive system remains among the most important challenges, requiring further advancements in power devices.
The capacity of the onboard battery
is increasing to improve the cruising range of EVs. And in conjunction with this, the use of higher voltage batteries (800V) is progressing to meet the demand for shorter charging times.
To solve these various challenges,
designers urgently need SiC power devices capable of providing high withstand voltage with low losses.
As a result, ROHM’s new 4th Generation SiC MOSFETs
are capable of delivering low ON resistance with high-speed switching performance, contributing to greater miniaturization and lower power consumption in a variety of applications, including automotive traction inverters and switching power supplies.
Bare chip samples have been made available from June 2020, with discrete packages to be offered in the future.
ROHM
is committed to continue to expand its SiC power device lineup while combining modularization technologies with peripheral devices such as control ICs designed to maximize performance in order contribute to technical innovation in next-generation vehicles.
At the same time, ROHM will provide solutions that resolve customer issues – including web-based simulation tools that reduce application development man-hours and help prevent evaluation problems.
Key Features
1) Improved trench structure delivers the industry’s lowest ON resistance
2) Achieves lower switching loss by significantly reducing parasitic capacitance
ROHM Semiconductor – ROHM Co., Ltd.
https://www.rohm.com/news-detail?news-title=new-4th-gen-sic-mosfets&defaultGroupId=false