ウシオ製EUV光源を搭載した､TNOの露光・分析ファシリティ「EBL2」(出所:ウシオWebサイト)
ウシオ電機：EUV光源･SnLDP､蘭TNO･EBL2が採用：次世代半導体量産必須：
USHIO INC.the EUV LightSource for MaskInspection to EUV Lithography Production：
USHIO INC。首次接受EUV光源，用于EUV光刻批量生产工艺的掩模检测
ウシオ電機：EUV光源･SnLDP
当社は、検査装置メーカーから様々なEUV光源（EUVリソグラフィマスク検査装置用）を受注しています。
EUV光源：EUVリソグラフィマスク検査装置用EUV光源
この度、量産プロセス向け’高輝度SnLDP･EUV光源’が、初めて検収されましたのでお知らせ致します。
先行稼働の研究開発機が高評価されました。
EUVリソグラフィとは：
高度な微細化が進む次世代半導体製造工程には欠かせない技術。
大手デバイスメーカーを中心に、実用化に向けた検証が進んでいます。
EUVリソグラフィの量産技術確立には、高精細マスクの欠陥検査・検出用EUV光源の実用化が必須です。
オランダ応用科学研究機構（TNO）：
オランダ応用科学研究機構（TNO：The Netherlands Organization for Applied Scientific Research）
2017年3月、’高輝度SnLDP･EUV光源’（レーザーアシストプラズマ放電方式）を、TNOに提供しました。
TNOは、’高輝度SnLDP･EUV光源’を「EBL2：EUV照射分析装置」に搭載､研究・評価サービスを実施中。
今回の検収成果：
’高輝度SnLDP･EUV光源’を使えば、次世代半導体製造工程の量産プロセスに必要な、高輝度EUV光を使用した“Actinic”なEUVリソグラフィ用マスク検査が可能となります。
今回、検査装置メーカーに先行納入し、既に稼働している研究開発機向けEUV光源の性能が高く評価されたものです。
EUV光源：コアコンピタンス
EUV光源は、当社のコアコンピタンスと位置付け。
最先端半導体製造プロセス向けの、EUVリソグラフィ実用化に、高性能のEUV光源は必須。
ウシオは今後も、高精度マスク検査用EUV光源技術を進展させ、最先端半導体製造プロセスに貢献してまいります。
ウシオ電機
https://www.ushio.co.jp/jp/news/1002/2019-2019/500468.html
USHIO INC. Received the First Acceptance of the EUV Light Source for Mask Inspection to EUV Lithography Mass Production Process
Accelerating EUV Business by highly recognized performance in the R&D Equipment
USHIO INC. (Head office: Tokyo, Chief Executive Officer: Koji Naito)
announced that the company has received the first acceptance of the EUV light source for mask inspection equipment*1 used in an EUV lithography mass-production process (hereinafter “EUV light source”)on July 2019.
EUV lithography technology
is indispensable to the manufacturing process of more highly integrated next-generation semiconductor devices, and major device manufacturers are verifying the practical use of the technology.
Meanwhile, the mask inspection with the EUV light source to detect defects in high-precision masks must be implemented in order to establish an EUV lithography mass-production technologies.
USHIO
has been conducting research and development of the high-brightness EUV light source
and has improved the performance and reliability by providing research and evaluation service using USHIO’s high-brightness laser-assisted discharge-produced plasma (Sn LDP) EUP light source*2
in the EUV exposure and analysis facility (“EBL2”) of the Netherlands Organization for Applied Scientific Research (“TNO”) from March 2017.
In addition to the activity in TNO,
this acceptance had been made by the high performance achievement of the EUV sources previously delivered and currently operated for inspection tool development at an inspection equipment manufacturer.
This high-brightness EUV light source enables “actinic” mask inspection for EUV lithography that is required for next-generation semiconductor mass-production process.
We provide full lineup of lighting-edge solutions. In particular, the EUV light source is one of our core competences.
The practical use of EUV lithography is one of the long-awaited necessary conditions to deliver tangible fruits of new generation technologies such as a new communication protocol and various applications using the communication technologies.
As a light specialist company, it is our pleasure to contribute to the realization of expected social infrastructure through the acceptance of EUV light source for inspection equipment for mass-production process.
USHIO INC.
https://www.ushio.co.jp/en/news/1002/2019-2019/500468.html