Sumitomo Chemical: Mass production of GaN 4-inch single crystal substrate: Next-generation HVPE method
-Sales of GaN substrate over 10 billion yen-
-What are the areas that Sumitomo Chemical is aiming for? –
Sumitomo Chemical:
A gallium nitride (GaN) single crystal substrate by the next-generation vapor deposition (HVPE) method.
Sales will be tripled to over 10 billion yen.
Mass production of 4-inch size:
In 2022, mass production sales of 4-inch size single crystal substrates for power semiconductors began.
In 2024, we will prepare the production system necessary for full-scale expansion of 4-inch size substrates in Japan.
2-inch substrate for laser light source:
Currently, Sumitomo Chemical holds a high market share in 2-inch substrates for high-brightness projectors and laser light sources.
Utilizing the accumulation of advanced technology, we will mass-produce 4-inch substrates and expand their applications to power semiconductors.
Launched with existing equipment of subsidiary Siox.
Mass production of 6-inch boards:
We have succeeded in prototyping a 6-inch board and havetened to establish mass production technology.
GaN substrate:
GaN substrate
Compared to silicon power semiconductor substrates
Significantly increase the switching speed,
Moreover, the device can be miniaturized.
We will develop applications for personal computers and server power supplies, and aim for in-vehicle applications.
Sumitomo Chemical’s next-generation HVPE method:
Sumitomo Chemical will reduce the defects of the HVPE method to one-hundredth or less of the conventional one.
Established next-generation manufacturing technology.
Required quality of power semiconductors:
Meets the required quality of high-power semiconductors.
Sumitomo’s technology is
Grow the crystals in a zigzag,
Hit each other with defects
A mechanism to cancel each other out.
Also,
When epitaxially growing a GaN crystal on a GaN substrate
A technique for improving the quality of the epitaxial layer was developed using the HVPE method.
New switch