Sumitomo Electric develops high-quality 6-inch SiC substrate: commercializes “CrystEra®”
Sumitomo Electric:
On May 11, 2020, we succeeded in “CrystEra”, a new high quality 6 inch (150mm diameter) SiC single crystal substrate.
6 inch (150mm diameter) SiC single crystal substrate for power devices with low dislocation density and reduced thickness variation and warpage.
From the second half of FY2020, we plan to apply the developed substrate to SiC epitaxial substrate products.
6-inch SiC single crystal substrate: “Cryst Era”
The newly commercialized 6-inch SiC single crystal substrate “CrystEra” is
In addition to the company’s compound semiconductor technology,
Incorporated high-precision simulation
Utilizing a growth reactor that makes full use of our proprietary technology “MPZ1”
In addition, it has succeeded in “reducing thickness variation and warpage despite low dislocation density” by “constructing processing technology suitable for hard and brittle SiC”.
EE Times Japan
https://eetimes.jp/ee/spv/2005/13/news025.html
Successful commercialization of high-quality SiC 6-inch single crystal substrate “CrystEra®”
May 11, 2020
Sumitomo Electric:
Sumitomo Electric has succeeded in developing the single crystal substrate “CrystEra®” for 6-inch SiC power devices.
From the second half of fiscal 2020, application to our SiC epitaxial substrate “EpiEra®” will begin.
Power device:
It is a semiconductor device for power control and is used in various fields such as electric power, railways, automobiles, and home appliances.
Energy saving perspective:
With higher efficiency
Low power loss
High-performance devices are required.
Supply chain:
Substrate-Epitaxial substrate-Device
SiC (silicon carbide) is one of the hottest semiconductor materials in power devices.
However, the supply chain is not yet stable.
In the SiC market, “expectations for integrated production / possible manufacturers of substrates-epitaxial substrates-devices” are increasing.
Furthermore, with the expansion of the scope of application, “expectations for higher quality of materials” are also increasing.
Our original technology: “MPZ®”
This time, we made full use of our original technology “MPZ®” * 1.
Utilization of growth reactor,
Suitable for hard and brittle SiC
By building processing technology,
We have successfully commercialized a 6-inch (150 mm diameter) substrate (product name “CrystEra®”) for SiC power devices with low dislocation density and reduced thickness variation and warpage.
Press Release ｜ Company Information ｜ Sumitomo Electric Industries, Ltd.