NEDO: GaN-HEMT with single crystal diamond substrate: For mobile base stations ､ satellite communications
NEDO / Mitsubishi Electric / National Institute of Advanced Industrial Science and Tech
‘Multi-cell structure GaN-HEMT’:
Developed the world’s first ‘multi-cell structure GaN-HEMT’.
Introducing the multi-cell gallium nitride high electron mobility transistor (GaN-HEMT).
This time, we adopted single crystal diamond with high thermal conductivity for the heat dissipation substrate.
it will be installed in high-frequency power amplifiers for mobile communication base stations and satellite communication systems.
The ‘multi-cell structure GaN-HEMT’ improves power efficiency and lowers power consumption.
Conventional technology: Disadvantages of GaN-HEMT: Heat generation during high power operation
In recent years, high-power and high-efficiency gallium nitride high electron mobility transistors (GaN-HEMT * 1) have been used in high-frequency power amplifiers for mobile communication base stations and satellite communications.
However, the GaN-HEMT has a problem that current does not flow easily due to heat generation during high output operation.
Current technology: Direct bonding of single crystal diamond: High thermal conductivity as a heat dissipation substrate
This time, we succeeded in direct bonding of single crystal diamond (having high thermal conductivity as a heat dissipation substrate).
Developed ‘multi-cell structure GaN-HEMT’ which realized high power and high efficiency by direct bonding of single crystal diamond.
By installing ‘multi-cell structure GaN-HEMT’, the output density and power efficiency of high-frequency power amplifiers can be dramatically improved.
Contributes to lower power consumption in mobile communication base stations and satellite communication systems.