NEDO: Visualization of wafer strain distribution:

NEDO: Visualization of wafer strain distribution:

-Implemented in Mipox’s “XS-1 Sirius”-

NEDO
Nagoya University
Mipox

June 30th

“Crystal defects (dislocations) inside semiconductor crystal wafers” were visualized with non-destructive and low cost.

“Killer defect”:

“Killer defect” that deteriorates the withstand voltage characteristics of products

Conducted joint research on a system that automatically inspects “killer defects”.

System construction to count dislocations and
Dislocation and strain distribution throughout the wafer
Display intuitively and easily.
Succeeded in developing a heat map display function.

Mipox
SiC crystal dislocation
High-sensitivity visualization device “XS-1 Sirius”

Mipox,

Based on the results of these two researches

The dislocation count / heat map display function has been implemented in Mipox’s product “XS-1 Sirius”.

TECH +

https://news.mynavi.jp/techplus/article/20220701-2385564/

Contributes to improving convenience and efficiency of inspection processes in semiconductor manufacturing: Press Release | NEDO

https://www.nedo.go.jp/news/press/AA5_101553.html

NEDO: 웨이퍼의 변형 분포를 시각화:

– Mipox의 “XS-1 Sirius”에 구현

NEDO
나고야 대학
Mipox

6월 30일,

비파괴·저비용으로, 「반도체 결정 웨이퍼 내부의 결정 결함(전위)」을 가시화했다.

“킬러 결함”:

제품의 내압 특성을 열화시키는 「킬러 결함」

「킬러 결함」을 자동 검사하는 시스템의 공동 연구를 실시.

전위를 카운트하는 시스템 구축과,
웨이퍼 전체의 전위나 변형의 분포를,
직관적으로 알기 쉽게 표시한다.
히트맵 표시 기능 개발에 성공했다.

Mipox
SiC 결정 전위
고감도 시각화 장치 「XS-1 Sirius」

Mipox,

이번 두 가지 연구 성과를 바탕으로,

전위 카운트·히트 맵 표시 기능을, Mipox의 제품 「XS-1 Sirius」에 실장했다.

TECH+

반도체 제조에서 검사 공정의 편의성 향상 및 효율화에 기여 : 보도 자료 | NEDO

NEDO: Visualisatie van de verdeling van de wafelrek:

-Geïmplementeerd in Mipox’s “XS-1 Sirius”-

NEDO
Universiteit van Nagoya
Mipox

30 juni

“Kristaldefecten (dislocaties) in halfgeleiderkristalwafels” werden gevisualiseerd met niet-destructieve en lage kosten.

“Killer defect”:

“Killer-defect” dat de weerstandsspanningskarakteristieken van producten verslechtert

Gezamenlijk onderzoek gedaan naar een systeem dat automatisch “killer defects” inspecteert.

Systeemconstructie om dislocaties te tellen en
Dislocatie en spanningsverdeling over de wafel
Intuïtief en eenvoudig weergeven.
Het is gelukt om een ​​functie voor het weergeven van een warmtekaart te ontwikkelen.

Mipox
SiC kristal dislocatie
Hooggevoelig visualisatieapparaat “XS-1 Sirius”

Mipox,

Op basis van de resultaten van deze twee onderzoeken

De dislocatietelling / warmtekaartweergavefunctie is geïmplementeerd in het product “XS-1 Sirius” van Mipox.

TECH +

Draagt ​​bij aan het verbeteren van het gemak en de efficiëntie van inspectieprocessen in de productie van halfgeleiders: Persbericht | NEDO

Design of automatic detection algorithm for dislocation contrasts in birefringence images of SiC wafers

– IOPscience

Abstract

Birefringence imaging
is one of the powerful methods for non-destructive characterization of defects in the semiconductor crystals.

However, due to the complicated and unclear contrasts of dislocations in the birefringence image,

it was considered to be difficult to automatically detect the position of the dislocation contrasts by the conventional image processing.

In the present study,
we designed the automatic detection algorithm for the dislocation contrasts taking into account the characteristic feature of the dislocation contrasts, which were always pair of black and white contrasts.

To detect the large change in the contrast level near the dislocation contrast,

the automatic detection algorithm
was constructed by using a variance filter.

Finally,
we succeeded in detecting the position of the dislocation contrasts with relatively high precision and sensitivity.

https://iopscience.iop.org/article/10.35848/1347-4065/abde29/meta