Showa Denko develops the latest SiC epi-wafer: For the 2nd generation high quality power semiconductor
August 1, 2019
Showa Denko: Power semiconductor
On August 1, Showa Denko announced that it has developed the second generation of low defect grade silicon carbide (SiC) epitaxial wafers “High Grade Epi” for power semiconductors.
-Accelerate the spread of SiC inverters for electric vehicles and railway vehicles-
Material of SiC power semiconductor: Epi wafer (epitaxial wafer) 6 inch (150 mm) product
We have developed high quality second-generation products (HGE-2G) that are high-quality low defect grade “HGE (High Grade Epi)” currently in mass production.
SiC power semiconductors:
SiC power semiconductors are superior in high temperature resistance and high voltage characteristics and large current characteristics compared to currently mainstream silicon products.
Since the power loss can also be reduced significantly, the market is expanding as a product that realizes lightweight, compact and high efficiency modules used for power control.
Data center: server power,
Solar power: distributed power,
EV: Charger and high-speed charging station,
Adoption to railway cars is in progress.
In the early 2020s, full-scale installation of the power control unit (PCU) in EVs is expected.
News Release | Showa Denko KK