NCT: 6-inch film formation of gallium oxide power semiconductor:
Novel Crystal Technology (NCT)
Taiyo NIssan
Tokyo University of Agriculture and Technology
Announced that it has succeeded in forming a 6-inch film with a power semiconductor made of gallium oxide.
Gallium oxide
Power semiconductor
This time, it has become possible to form a film on a large wafer.
In the future, the wafer manufacturing cost can be greatly reduced.
Power semiconductors made of gallium oxide have an extremely high effect of reducing EV power consumption.
Nihon Keizai Shimbun
https://www.nikkei.com/article/DGXZQOUC019BJ0R00C22A3000000/
The world’s first successful film formation of gallium oxide on a 6-inch wafer using the HVPE method.
NEDO: “Strategic Energy Conservation Technology Innovation Program”
Novell Crystal Technology
Taiyo Nissin
Tokyo University of Agriculture and TechnologyGallium oxide (β-Ga2O3) is attracting attention as a next-generation semiconductor material.
For the first time in the world, we succeeded in forming a film on a 6-inch wafer by the halide vapor deposition (HVPE) method. It was
Film formation on 6-inch wafer:
This result is
We will make great progress in the development of β-Ga2O3 mass production film deposition equipment that can manufacture large-diameter epiwafers.
Large diameter and low cost:
This will lead to the realization of a large diameter and low cost of β-Ga2O3 epiwafer, which has been an issue for film formation cost.
β-Ga2O3 power device:
If β-Ga2O3 power devices become widespread,
Energy saving can be expected for inverters for motor control for industrial machinery, inverters for residential photovoltaic power generation systems, and next-generation EVs.
Novel Crystal Technology Co., Ltd.