Japan: Rapidly emerging “GaN power semiconductors”: SiC, GaN, Ga2O3
-A leading company that consumes half the power-
Ministry of Economy, Trade and Industry:
In June, the Ministry of Economy, Trade and Industry announced
Announced the goal of “reducing the power consumption of power semiconductors to half the current level by 2030.”
Power consumption of power semiconductors:
In order to achieve the goal of reducing the number by half, “ultra-high efficiency next-generation power semiconductors, SiC, GaN, Ga2O3, etc.” will be put into practical use.
Supports research and development of power semiconductors and supports capital investment in the semiconductor supply chain.
GaN power semiconductors:
Currently, GaN power semiconductors are expensive.
On the other hand, GaN power semiconductors can realize highly efficient and highly durable devices.
Focus on leading Japanese companies:
Japan Steel Works:
A mass production demonstration facility for GaN single crystal substrates was constructed.
Mitsubishi Chemical:
In May of this year, it announced that it had jointly built a demonstration facility for mass production of GaN single crystal substrates on the premises of the Japan Steel Works M & E Muroran Works.
Demonstration experiments for mass production of 4-inch substrates will be conducted.
The market supply is scheduled to start from the beginning of 2010.
Sumitomo Chemical:
Acquired Hitachi Metals’ GaN substrate and GaAs epiwafer business in 2015.
Promoting the development of next-generation compound semiconductor materials.
In 2010, we started mass production sales of 4-inch size single crystal substrates for power semiconductors.
In 2012, we will prepare the production system necessary for full-scale expansion of 4-inch boards in Japan.
Sumitomo Electric Industries:
The world’s first ultra-high-speed transistor (GaN-HEMT) using GaN is put into practical use.
It boasts the top share in the world for GaN-HEMTs for 5G base stations.
GaN devices are used in the high frequency band.
As the communication network evolves and the use of higher frequency bands progresses, demand is expected to increase further.
Mipox:
Nagoya University:
Joint research “Improvement of semiconductor manufacturing productivity, development of killer defect automatic inspection system”
Announced that it was adopted by NEDO’s “Public-Private Young Researcher Discovery Support Project”.
It is said that productivity will be dramatically improved by non-destructively visualizing crystal defects contained inside the wafer.
oxide:
In June, we will start shipping samples of the new material single crystal substrate “SAM” suitable for the growth of GaN thin film single crystals.
Single crystal substrate “SAM”
By using SAM, a higher yield than before is secured.
Realization of high-performance GaN thin film single crystal can be expected.
It is said that development will be accelerated for mass production in the future.
other than this,
Fujitsu General:
Shindengen Electric Manufacturing:
A subsidiary develops a power module using GaN.
Iwatsu Electric:
Engaged in measuring instruments and evaluation equipment for the development of GaN power semiconductors
SAMCO:
We provide chemical vapor deposition (CVD) equipment and dry etching equipment for mass production of GaN devices.
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