🔬AIST: Develop technology capable of detecting crystal defects of non-destructive next-generation power device materials

By AIST, 5 Science

🔬AIST: Develop technology capable of detecting crystal defects of non-destructive next-generation power device materials

– Promotion of higher quality gallium nitride (GaN) semiconductor crystal by Raman mapping –

point

  1. Development of technology to detect threading dislocation of blade like component from Raman mapping image of GaN semiconductor
  2. Ability to identify defect distribution and direction nondestructively
  3. Expectation for improving GaN semiconductor single crystal and improving yield

The details of this technology will be posted on the online version of Applied Physics Express on May 22 (UK time).

— Translated by TokioX’press —

http://www.aist.go.jp/aist_j/press_release/pr2018/pr20180522_2/pr20180522_2.html

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