Fig. 1 Newly developed chip structure (Top: Chip section; Bottom: Parallel-connected chips)
Mitsubishi Electric: Clarifying the mechanism of surge current!
ーDevelopment of SiC-MOSFET with built-in SBDー
Dempa Shimbun digital commentary article report
Expectations are rising for “SiC power semiconductors that can significantly reduce power loss.”
Mitsubishi Electric: “FMF800DC-66BEW”
Realized with the 3.3kV full SiC power module “FMF800DC-66BEW”.
A new SiC-MOSFET technology with built-in SBD was announced for large industrial equipment such as railway vehicles and DC power transmission.
Contribute to carbon neutrality through “miniaturization of railway propulsion control devices, energy saving, and spread of DC power transmission.”
Structure of separate SiC-MOSFET and SiC-SBD and structure image of SiC-MOSFET with built-in SBD
SiC-MOSFET with built-in SBD:
Compared to the conventional technology in which both are separate chips, the power module-mounted chip can be mounted at high density.
It is possible to make the module smaller and to increase the capacity. Also, switching loss can be reduced.
It will be popularized in “large industrial equipment for railroads and DC power transmission where miniaturization and energy saving are essential.”
Clarifying the mechanism of surge current:
Conventionally, thermal damage due to surge currents has been a major problem.
The world’s first elucidation of the “mechanism of surge current concentration in a specific chip”.
Newly developed new chip structure:
A new chip structure was developed. Even if all chips start energizing all at once, the surge current is distributed throughout each chip.
https://news.yahoo.co.jp/articles/338d63d2d12674c9bf3e7e05253c18c507cac549
MITSUBISHI ELECTRIC News Releases
Mitsubishi Electric
has now developed the world’s first mechanism
by which surge current concentrates on a specific chip in a parallel-connected chip structure inside a power module,
and a new chip structure in which all chips start energizing simultaneously so that surge current is distributed throughout each chip.
As a result, the power module’s surge-current capacity has been improved by a factor of five or more compared to the company’s existing technology,
which is equal to or greater than that of conventional Si power modules, thus enabling the application of an SBD-embedded SiC-MOSFET in a power module.
Details of the development were announced
at 2pm on May 31 (Local Time) during ISPSD62023, which was held in Hong Kong from May 28 to June 1.