Mitsubishi Electric: Power semiconductor , trench type ‘SiC-MOSFET’ : an original electric field relaxation structure
Mitsubishi Electric: Power semiconductor elements
Adopting a unique electric field relaxation structure as a power semiconductor element.
We have newly developed trench type * 2SiC * 3-MOSFET * 4.
Achieves both the withstand voltage performance of 1500V or higher and the world’s highest level * 1 element resistivity of 1.84mΩ (milliohm) per 1cm2.
If this power semiconductor element is mounted on a power semiconductor module, power electronics equipment can be further “energy-saving and downsized”.
Details of the development results:
It will be announced today (September 30) at ICSCRM * 5 2019 (September 29 to October 4, at the Kyoto International Conference Center).
* 2
A structure in which a “gate electrode” that applies voltage to control the flow of current is embedded in a semiconductor substrate in the form of a trench
* 3
Silicon Carbide: Silicon carbide
※Four
Metal Oxide Semiconductor Field Effect Transistor
※Five
International Conference on Silicon Carbide and Related Materials
http://www.mitsubishielectric.co.jp/news/2019/0930.html?cid=rss