Taiyo Nippon Sanso: GaN crystal production equipment : Mass production of high-quality bulk crystals
-A breakthrough for power device development-
Taiyo Nippon Sanso / Tokyo Univ of Agriculture and Tech / JST
Development overview:
Taiyo Nippon Sanso jointly developed a GaN crystal production system that achieves high speed, high quality, and continuous growth.
Based on the patented technology of Tokyo University of Agriculture and Technology, Taiyo Nippon Sanso has developed the conventional HVPE method.
Developed an apparatus based on trihalide vapor phase epitaxy (THVPE) (Figs. 1 and 2).
The gallium trichloride-ammonia reaction system is used to grow crystals at higher temperatures (around 1200-1400 degrees).
Conventional method:
Conventional methods cannot produce “practical GaN crystals required for electronic devices” in terms of cost and crystal quality.
This method:
We have developed a GaN crystal production system that achieves high-speed, high-quality, continuous growth using the ‘gallium trichloride-ammonia reaction system’.
“Mass production of inexpensive, high-quality bulk crystals” is possible, and it is expected to be “a breakthrough for the development of high-performance GaN devices”.
In the future, we plan to collaborate mainly with GaN substrate manufacturers.
Accumulating the achievements of GaN crystal thickening, we realize “mass production of inexpensive and high quality GaN bulk crystals”.