🎗Spin Transfer Technologies and Tokyo Electron Join Forces to Bring MRAM to the Next Level .
FREMONT,Calif.and TOKYO – October 9,2017 – Spin Transfer Technologies, Inc. (STT) and Tokyo Electron (TEL) are pleased to announce that they have today signed an agreement for a collaborative engineering program for next-generation SRAM and DRAM-class ST-MRAM devices.
The agreement will further the advance of ST-MRAM, a new class of high-performance, persistent memory devices, to provide previously unachievable levels of speed, density, and endurance.
The combination of STT’s ST-MRAM technology and TEL’s advanced PVD MRAM deposition tool will allow the companies to quickly develop processes for the highest density and endurance devices.
Both companies are allocating resources to this project, with STT contributing its high-speed, high-endurance perpendicular magnetic tunnel junction (pMTJ) design and device fabrication technology, and TEL utilizing its industry-leading ST-MRAM deposition tool and knowledge of unique formation capabilities of magnetic films.
This agreement aligns with each company’s goal of offering compelling solutions for the embedded SRAM, and eventually stand-alone DRAM, markets. 2017 | Tokyo Electron