JST: Successfully developed new device combining IGZO and next-generation functional material Wednesday June 12th, 2019By Tokio X'press memory, Semi conductor
Tohoku University: Development of new magnetic tunnel junction (MTJ): Vehicle specification · 150 ° C environment clear Wednesday June 12th, 2019By Tokio X'press memory, Semi conductor
Toshiba Memory Develops 96-Layer BiCS FLASH with QLC Technology Saturday July 21st, 2018By Tokio X'press memory Toshiba Memory
🍀Toshiba completes $18B sale of memory business to consortium including Apple Sunday June 3rd, 2018By Tokio X'press memory Toshiba
💡Fujitsu has launched a 64-Kbit FRAM Guaranteed to Operate as low as -55℃ Wednesday April 25th, 2018By Tokio X'press memory, Diode fujitsu