Tohoku University: Development of new magnetic tunnel junction (MTJ): Vehicle specification · 150 ° C environment clear
Tohoku Univ: International Integrated Electronics Research and Development Center (CIES)
Development of new MTJ technology: Magnetic tunnel junction (MTJ)
Current MTJ technology: Only up to 85 ° C of the general electronic device specification, sufficient data retention time can be obtained. Therefore, the application in general consumer equipment was limited (car specification: durability in 150 ° C environment required)
This MTJ technology: This is an essential technology for deploying in harsh environments of automobiles and social infrastructures. Conventionally, “MTJ technology that secures data retention time at higher operating temperature” has been desired.
Specifically, we have developed a new MTJ technology by applying “Quadruple interface stacking technology (data retention time extension) to increase interface magnetic anisotropy”.
We have succeeded in developing a “reliable MTJ for 1X nm generation” that can increase the data retention time by 1,000,000 times even under 150 ° C environment resistance.
Magnetic Random Access Memory (STT-MRAM): Low Power Consumption Electronics
Magnetic random access memory (STT-MRAM: using the nature of magnet, non-volatile memory) is a basic technology to realize low power consumption electronics.
So far, academic and industrial groups have been promoting research and development, and from last year, a large foundry company with a megafab started mass production.
Current MTJ technology: Compared to data retention time at 125 ° C operating temperature
This MTJ technology: In an environment resistant to 150 ° C (necessary for automobiles and social infrastructure),
Data retention time can be extended by one million times.
https://www.tohoku.ac.jp/japanese/2019/06/press20190612-02-CIES.html