Toshiba Memory Develops 96-Layer BiCS FLASH with QLC Technology
SAN JOSE, Calif., July 19, 2018 – Toshiba Memory America, Inc. (TMA), the U.S.-based subsidiary of Toshiba Memory Corporation, today announced the development of a prototype sample of 96-layer BiCS FLASHTM, its proprietary three-dimensional (3D) flash memory, with 4-bit-per-cell (quad level cell, QLC) technology.
With this milestone achievement, Toshiba demonstrates its technology leadership in the storage market by delivering technology that boosts single-chip memory capacity to the highest level yet achieved1.
TOSHIBA MEMORY | Americas
https://business.toshiba-memory.com/en-us/company/tma/news/2018/07/memory-20180719-1.html
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