Toshiba Memory: XL-FLASH ™ (SCM) sample shipment: 128 Gigabit (Gb) chip products
August 6, 2019
Toshiba Memory:
We have developed a new storage class memory (SCM), XL-FLASH ™.
Sample shipment starts.
Sample shipments of products using 128 gigabit (Gb) chips [1] will begin for OEM customers in September.
Mass production is scheduled to start in 2020.
XL-FLASH ™ (SCM): 128 Gigabit (Gb) chip
This product uses a 96-layer lamination process.
This product can read and write 3D Flash Memory BiCS FLASH ™ at high speed using 1 bit / cell SLC technology.
XL-FLASH ™: Realization of high speed
Adopted 16 physical plane structure with excellent parallel processing.
Developed circuit technology to achieve high speed.
Realizes ‘readout latency of 5 µs or less’, which is 10 times faster (compared with existing TLC (3 bits / cell) BiCS FLASH ™)
XL-FLASH ™: New Memory Hierarchy / SCM
This product is positioned as a new memory hierarchy and SCM that bridges the performance gap between DRAM and NAND flash memory.
This product can reduce the cost per bit compared to conventional DRAM.
Non-volatile memory that supports large capacity like NAND flash memory.
XL-FLASH ™: Application fields
We will respond to the needs of the expanding SCM market with XL-FLASH ™, including high-speed SSDs for data centers and enterprise storage.
Toshiba memory
https://business.toshiba-memory.com/ja-jp/company/news/news-topics/2019/08/corporate-20190806-1.html