Toshiba: Developed triple gate IGBT: Reduced loss by 40%
-Three gate electrodes reduce switching loss by 40%-
2021-06-02
Toshiba:
On June 2, 2021, we developed the “Triple Gate IGBT”.
IGBTs (Insulated Gate Bipolar Transistors) are power semiconductors for power converters such as inverters and DC-DC converters.
The loss when switching power on and off can be reduced by up to 40.5% compared to the conventional model.
Commercialization from 2023 to 2024:
In the future, we plan to proceed with development for practical use, such as confirming reliability, and commercialize it from 2023 to 2024.
Announced at “ISPSD 2021”:
The results of this research will be announced at the international conference on power semiconductors “ISPSD2021” (held online from May 30 to June 2, 2021).
Toshiba R & D Center
Mr. Kazuto Takao, General Manager of Electronic Device Office
The triple-gate IGBT “can be a breakthrough in the traditional performance saturation barrier,” he said.
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Toshiba’s Triple-Gate IGBT Power Semiconductors Cut Switching Power Losses by 40.5%
-Support high efficiency power converters for electrical systems and contribute to the realization of carbon-neutral economy-
2 June, 2021
Toshiba Corporation TOKYO─
Toshiba Corporation (TOKYO: 6502) has developed a prototype triple-gate IGBT*1
that reduces overall power loss by up to 40.5% when switching on and off (switching losses), the process of allowing and stopping electricity flow, in power semiconductors used to control electric power.
It is difficult to reduce power loss in IGBT,
due to a trade-off whereby reducing the loss when the IGBT is on (conduction losses) increases switching loss.
Toshiba took on this problem
by developing a silicon IGBT with a new structure of three gate electrodes and gate control technology that delivers high accuracy gate electrode switching.
The new device
reduces turn-on loss*2 by 50% and turn-off loss*3 by 28%,
an overall reduction of up to 40.5% against a conventional single-gate electrode IGBT, with no increase in conduction losses.
The new technology is expected to boost the efficiency of power converters in electrical systems,
including renewable energy systems, electric vehicles, railroads, and industrial equipment.
Toshiba will present the technology at ISPSD2021, an international online conference from May 30 to June 3.
Toshiba has developed a triple-gate IGBT and gate control technology
that significantly reduces switching loss through flexible control of the accumulation of electrons and holes, from the gate drive circuit side.
The three gates,
the main gate (MG),
primary control gate (CGp),
and secondary control gate (CGs),
can be driven independently.
When gates are turned on,
delaying CGs and first turning on MG and CGp ensures simultaneous large electron and hole flows from the three gate electrodes,
and they accumulate in the IGBT at a higher speed, realizing a faster switching time and lower turn-on loss.
When turning the gates off,
electrons and holes inside the device are reduced by turning off CGp before MG, while leaving CGs off.
When the MG is switched off,
the IGBT switches off completely and the electrons and holes disappear at high speed, reducing turn-off loss.
Corporate Research & Development Center | Toshiba
https://www.global.toshiba/ww/technology/corporate/rdc/rd/topics/21/2106-01.html