NTT: successful nanowire laser, communication wavelength band oscillation at room temperature – 1/100 thickness of hair
Nippon Telegraph and Telephone Corporation (NTT):
independently developed a method for forming semiconductor nanostructures.
fabricated a laser structure using high quality nanowires (1/100 thickness of hair) this time.
High quality nanowire · laser:
succeeded in room temperature laser oscillation (impossible so far) in the optical communication wavelength band.
In the future, we will install it on the silicon optical integrated circuit and consider using it for the communication wavelength band micro laser source.
In the communication wavelength band nanowire laser,
In addition to being able to form directly on silicon photonic integrated circuits,
By direct coupling with the optical waveguide, light loss is greatly reduced.
This time research group:
We do not use traditional gold and silver dissimilar metals.
We have developed ‘Autocatalyst nanowire growth method’ this time.
In this method, indium metal which is the same element as the light emitting / barrier layer constituent atoms is catalyzed.
Indium arsenide (InAs)
Indium phosphide (InP)
Nanowires are:
A wire-like nanostructure having a diameter (tens to hundreds of nanometers) of 1/100 or less of the thickness of the hair.
Different materials are laminated in one nanowire,
Arrange the nanowires themselves at arbitrary positions,
Semiconductors, metals, superconductors can also be synthesized,
The degree of freedom of structure is also high.
Since a quantum mechanical effect by a minute size is developed,
Micro laser source,
Photodetecting element,
Solar cell,
Biosensor,
Transistors and other applications in a wide range of fields have been drawing attention in recent years.
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