💡Fujitsu Technology Bonds Single-crystal Diamond and SiC at Room Temperature; Enables Boost to Radar Performance 2017/12/7

By Semi conductor, Diode

💡Fujitsu Technology Bonds Single-crystal Diamond and SiC at Room Temperature; Enables Boost to Radar Performance.

In world’s first such technology, cooling efficiency improved, radar’s observable range enhanced about 1.5 times on increased GaN-HEMT power-amp transmitter output

Tokyo and Kawasaki, Japan, December 07, 2017

Fujitsu Limited and Fujitsu Laboratories Ltd. today announced development of the world’s first technology for bonding single-crystal diamond to a silicon carbide (SiC)(1) substrate at room temperature.

Using this technology for heat dissipation in a high-power gallium nitride (GaN)(2) high electron-mobility transistor (HEMT)(3) enables stable operations at high power levels.

Application of this technology is expected to significantly enhance the performance of weather radars and wireless communications.

Fujitsu Global

 

http://www.fujitsu.com/global/about/resources/news/press-releases/2017/1207-01.html

More from tokioX :

  1. Mitsubishi Chemical: Mass production of large-diameter GaN single crystal substrates: 2, 4, 6-inch substrates
  2. Fujitsu: GaN HEMT, simplification and downsizing of cooling system: downsizing of radar system
  3. AIST: 10nm ultra-thin organic semiconductor single crystal film wafer: by simple printing method
  4. NEDO: GaN-HEMT with single crystal diamond substrate: For mobile base stations ､ satellite communications
  5. NEDO: World’s First Single-Crystal Diamond from Gas-Next Generation Power Semiconductor Tech
  6. Fujitsu Successfully Triples the Output Power of Gallium-Nitride Transistors
  7. 🍀AGC Invests in Next-generation Power Semiconductor Material Developer Novel Crystal Technology