Fujitsu Successfully Triples the Output Power of Gallium-Nitride Transistors
Expands radar observation range by 2.3 times
Fujitsu Limited,Fujitsu Laboratories Ltd.
Tokyo and Kawasaki, Japan, August 10, 2018 Fujitsu Limited and Fujitsu Laboratories Ltd. today announced that they have developed a crystal structure that both increases current and voltage in gallium-nitride (GaN)(1) high electron mobility transistors (HEMT)(2), effectively tripling the output power of transistors used for transmitters in the microwave band. The GaN HEMT technology can serve as a power amplifier for equipment such as weather radar – by applying the developed technology to this area, it is expected that the observation range of the radar will be expanded by 2.3 times, enabling early detection of cumulonimbus clouds that can develop into torrential rainstorms.
http://www.fujitsu.com/global/about/resources/news/press-releases/2018/0810-01.html