JST: High-temperature gallium oxide diodes: power devices and sensors for IoT
-Realization of power device / IoT sensor with excellent environmental resistance-Key points
Japan Science and Technology Agency (JST):
Developed a diode “composed of gallium oxide and layered oxide electrode (PdCoO2)“.
This diode is attracting attention as a semiconductor for next-generation power devices.
This diode: oxide electrode (PdCoO2)
It exhibits high electrical conductivity comparable to gold and has excellent heat resistance and environmental resistance.
In particular, it expands the operating environment of semiconductor devices due to its high stability as an oxide.
In addition, simplification of the cooling mechanism (essential for conventional devices) leads to energy saving.
This diode: Field of application
This diode can also be used in IoT device operating environments such as automobiles and industrial plants.
In particular, application to power device control and sensor applications is expected.
In the future, it is expected to be applied to Ga2O3 power devices and sensing devices in automobiles and industrial plants.