Denso: Started mass production of SiC power semiconductors: Installed in new FCV / Mirai
Denso:
On December 10, high-quality SiC power semiconductors were commercialized.
Announced “Start of mass production of next-generation boost power module”.
Semiconductor material SiC:
SiC has better performance in high temperature, high frequency, and high voltage environments than conventional Si (silicon).
Reduce system power loss,
Greatly contributes to miniaturization and weight reduction
Accelerate electrification,
It has been attracting attention as a key device material.
Development of SiC technology “REVOSIC”:
DENSO has been engaged in research and development of SiC power semi-conducting S technology “REVOSIC”. ..
First adopted by TOYOTA SORA:
In 2014, SiC transistors were first put into practical use for audio.
In 2018, automotive SiC was then adopted for TOYOTA SORA.
In 2020, we will also release a newly developed automotive SiC transistor.
With the newly developed SiC transistor
Both SiC diodes
It will be installed in the new FCV Mirai.
Newly developed SiC transistor:
The newly developed SiC transistor uses a trench gate type.
DENSO’s unique structure achieves both high reliability and high performance required in harsh in-vehicle environments.
Next-generation boost power module:
“The next-generation booster power module equipped with this diode and transistor” was compared with “conventional Si power semiconductor-equipped products”.
Volume reduced by about 30%,
Power loss reduced by about 70%,
Miniaturization of boost power module
Contributes to improving vehicle fuel efficiency.
Adopted for the new “Mirai”:
This next-generation boost power module is
It is used in Toyota Motor’s new FCV “Mirai” sold on December 9, 2020.
Car Watch
https://car.watch.impress.co.jp/docs/news/1294366.html
DENSO Produces Silicon Carbide Power Semiconductors for Fuel Cell Vehicles
Now, DENSO
has developed a new in-vehicle SiC transistor, and this marks the first time DENSO has used SiC for in-vehicle diodes and transistors.
The newly developed SiC transistor
offers both high reliability and high performance in in-vehicle environments, which can challenge semiconductors,
thanks to DENSO’s unique structure and processing technique, which apply trench gate MOSFET.
The new model of booster power module equipped with the SiC power semiconductors (diodes and transistors)
is about 30% smaller in volume and provides roughly 70% less power loss
compared to a conventional product equipped with Si power semiconductors, helping to reduce the size of the booster power module and improve vehicle fuel efficiency.
Newsroom | News | DENSO Global Website
http://www.denso.com/global/en/news/newsroom/2020/20201210-g01/