💻Development of a 3D Stacking Process for Non-Volatile MRAM

By 3DCG, CMOS

💻Development of a 3D Stacking Process for Non-Volatile MRAM

Researchers: the Research Center for Ubiquitous MEMS and Micro Engineering, the Nanoelectronics Research Institute; JST and the Cabinet Office

Summary

The researchers have developed a stacking technology for a magneto-resistive random access memory (MRAM) to separately form a single-crystal tunnel magneto-resistive (TMR) thin film and then bond it to a CMOS.

http://www.aist.go.jp/aist_e/list/latest_research/2018/20180514/en20180514.html

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