AIST: World’s highest performance gallium nitride piezoelectric thin film is fabricated by RF sputtering method point   20170831

By AIST, JPN

 

AIST: World’s highest performance gallium nitride piezoelectric thin film is fabricated by RF sputtering method
point

By growing on the metal alignment layer, a high quality gallium nitride oriented thin film is fabricated by RF sputtering method
Piezoelectric performance improved dramatically by addition of scandium
In addition to application as a sensor and energy harvester, it also expects a spillover effect on manufacturing technology

 

http://www.aist.go.jp/aist_j/press_release/pr2017/pr20170831_2/pr20170831_2.html

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