🎇AIST: Developed material for magnetic memory realizing high efficiency voltage spin control 20171201

🎇AIST: Developed material for magnetic memory realizing high efficiency voltage spin control

– Advance to practical application of voltage-controlled magnetic memory with low power consumption –

point

  1. Voltage spin control efficiency of ultra thin film magnet of iridium iron alloy tripled
  2. First achieved voltage spin control efficiency required for practical application of voltage controlled magnetic memory
  3. A way to realize the ultimate nonvolatile memory with no standby power and small driving power

Future plans

In addition to developing the mass production technology of the material developed this time, we are developing new materials and structures aiming at further improvement of perpendicular magnetic anisotropy and voltage spin control efficiency, and expansion of memory applications that can use voltage torque MRAM and real Tackle development to memory circuits.

http://www.aist.go.jp/aist_j/press_release/pr2017/pr20171201/pr20171201.html