Meidensha: Successful high barrier deposition at room temperature-ALD (Atomic Layer Deposition)
Meidensha: ALD (Atomic Layer Deposition)
We have developed the world’s first ALD (Atomic Layer Deposition) deposition technology.
We have established a new ALD (Atomic Layer Deposition) deposition technology that stacks atomic level films using a carrier gas (a gas that carries the source of the oxide film) under a normal temperature environment.
Research and development of this technology was conducted jointly with the National Institute of Advanced Industrial Science and Technology, and a patent application was filed in February 2019.
Deposition technology: ALD (Atomic Layer Deposition)
It enables film formation on “plastic films and ultrathin films that are susceptible to heat damage”.
Extremely low vapor permeability allows high quality and reduced energy consumption in the manufacturing process.
Specific application: extremely low vapor permeability
Sealing of semiconductors and displays,
Secondary battery parts
Modification of automobile parts etc.
Application to a wide range of fields can be expected.
OER process technology: (Our patented)
Meidensha’s Pure Ozone Generator is a proprietary technology of Meidensha that generates highly active OH radicals at room temperature by reacting high purity ozone with ethylene gas.
Using this technology, it is possible to modify, deposit, and clean organic substances (materials other than metals) at normal temperature.
Deposition using two process techniques:
We have already succeeded in manufacturing room temperature CVD film in April 2018 (April 2018 press release).
This time, we succeeded in manufacturing a denser room temperature ALD film.
Future development goals:
In the future, we will incorporate this technology into a pure ozone generator.
We will develop and market OER process equipment capable of both room temperature CVD deposition and ALD deposition.
2019 | Meidensha
https://www.meidensha.co.jp/news/news_03/news_03_01/1231056_2469.html