Mitsubishi Electric Develops New Technology
to Realize Small, High-efficiency GaN Power Amplifier Module for 5G Base-Stations
TOKYO, July 14, 2020 – Mitsubishi Electric Corporation (TOKYO: 6503)
announced today they have developed a new technology to realize a gallium nitride (GaN) power amplifier module for 5G base-stations that offers a combination of compact (6mm by 10mm) footprint and extra-high power-efficiency1, the latter exceeding an unprecedented rating of 43%2.
The module, which uses a minimum number of chip components in the matching circuit to control high-quality signal output,
is expected to help realize 5G base-stations that are widely deployable and highly power efficient.
Technical details of the new module
will be presented at the IEEE International Microwave Symposium this coming August.
1 According to Mitsubishi Electric research as of July 14, 2020
2 Using the 5G frequency range of 3.4-3.8GHz
Key Features
1)High-density mounting technology to realize compact (6mmx10mm) power amplifier module for more widely deployable 5G base-stations
2)World’s highest power efficiency reduces 5G base-station’s power consumption
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