💡AIST: Developed SiC transistor with Schottky barrier diode of 1200 volt class

By EV, AUTO, Diode

💡AIST: Developed SiC transistor with Schottky barrier diode of 1200 volt class

– To realize high efficiency and high reliability power module for hybrid vehicle (HEV) / electric vehicle (EV) –

point

  1. Demonstrated that built-in diodes do not deteriorate in the forward direction with mass production level prototype of 1200 V voltage class transistor
  2. Developed SiC vertical trench MOSFET (transistor) with built-in Schottky barrier diode (trench SBD)
  3. Contributing to higher efficiency and higher reliability of all-silicon carbide (SiC) power modules for HEV and EV

http://www.aist.go.jp/aist_j/press_release/pr2017/pr20171205/pr20171205.html

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