💡AIST: Developed SiC transistor with Schottky barrier diode of 1200 volt class

💡AIST: Developed SiC transistor with Schottky barrier diode of 1200 volt class

– To realize high efficiency and high reliability power module for hybrid vehicle (HEV) / electric vehicle (EV) –

point

1. Demonstrated that built-in diodes do not deteriorate in the forward direction with mass production level prototype of 1200 V voltage class transistor
2. Developed SiC vertical trench MOSFET (transistor) with built-in Schottky barrier diode (trench SBD)
3. Contributing to higher efficiency and higher reliability of all-silicon carbide (SiC) power modules for HEV and EV

http://www.aist.go.jp/aist_j/press_release/pr2017/pr20171205/pr20171205.html