💡Tokyo Institute of Technology successfully fabricated silicon thin film for wafer grade quality solar cells
Expect to greatly reduce manufacturing costs at a growth rate of 10 times or more
Point
- Successful formation of high quality Si single crystal thin film for solar cell at growth rate more than 10 times higher than conventional
- Reduced crystal defect density to silicon wafer level by nano surface roughness control technique
- Develop technology that maintains power generation efficiency of single crystal Si solar cell and can drastically reduce cost
Overview
Professor Ihara and Kasuke Hasegawa of Tokyo Institute of Technology, Applied Chemistry Group, collaborated with Professor Yuji Noda of Waseda University to develop high quality single crystal Si We succeeded in fabricating a thin film at a growth rate more than 10 times higher than before. In principle, the raw material yield can be improved to nearly 100%, so it can be expected that the manufacturing cost can be drastically reduced while maintaining the power generation efficiency of the single crystal Si solar cell.
Tokyo Tech News | Tokyo Institute of Technology