Micron: Considering acquisition of Kioxia: Samsung Electronics is in jeopardy

Micron: Considering acquisition of Kioxia: Samsung Electronics is in jeopardy

-President Biden supports $ 50 billion for Japanese NAND companies-

March 31, The Wall Street Journal (WSJ)

Micron and Western Digital:

“Micron and Western Digital are considering the acquisition of Kioxia,” he said, citing multiple sources.

Representative memory company Micron:

It has embarked on omnidirectional measures such as “promoting the acquisition of Japan Kioxia (formerly Toshiba Memory), the world’s second largest NAND flash memory.”

Kioxia’s corporate value:

The corporate value of Kioxia (formerly Toshiba Memory) is estimated to be at the $ 30 billion level.

Stock ownership structure:

The stock ownership structure

Toshiba 40.2%,
HOYA is 9.9%,
Korea-Japan-US Consortium 49.9%,
Korea SK Hynix is ​​participating in the Korea-Japan-US Consortium.

Impact on the Korean semiconductor industry:

The Korean semiconductor industry has fallen into shock.

Samsung Electronics’ status is in jeopardy.

Since 2002, Samsung Electronics has maintained the number one position in the NAND flash memory market.

However, a successful acquisition could take the top position.

Micron (5th),
Western Digital (3rd),
It is highly likely that either one will overtake Samsung Electronics in terms of production capacity if it acquires Kioxia.

An industry insider analyzed that “the influence of the US government had an effect on this acquisition consideration.”

Kioxia Initial Public Offering (IPO):

Meanwhile, Bloomberg and the Nihon Keizai Shimbun predict that there will be no significant progress in the acquisition negotiations.

“Kioxia is more likely to go public this summer,” he said.

Joongang Ilbo 

https://s.japanese.joins.com/JArticle/277227?sectcode=320&servcode=300

Kioxia: 2.4x better write performance: 6th Generation 3D NAND Flash

Kioxia
Western Digital

On February 18, it announced that it had developed 6th generation 3D NAND flash memory technology.

6th Generation 3D NAND

With 6th Generation 3D NAND

162 layers of memory stacked vertically,

Planar cell array density,

Up to 10% improvement compared to the previous generation.

As a result, the die size has been reduced by 40% and the manufacturing cost has been reduced.

in addition,

CUA (Circuit Under Array) technology

By adopting a 4-plane configuration

66% improvement in I / O performance compared to the previous generation.

It is said that the performance at the time of writing is reduced by about 2.4 times, and the latency at the time of reading is reduced by 10%.

PC Watch

https://pc.watch.impress.co.jp/docs/news/1307468.html

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